Description: Abstract— This letter describes the 狻猀琀 demonstration of a fully
integrated Doherty power ampli旻爀 (PA) monolithic microwave
integrated circuit (MMIC) with post-distortion linearization at
millimeter-wave (MMW) frequency band. The Doherty ampli旻爀
MMIC, using a 0.15- m GaAs HEMT process, achieves a small
signal gain of 7 dB from 38 to 46 GHz with a compact chip size
of 2 mm2 . The saturation output power of the Doherty ampli旻爀
is 21.8 dBm. The similar topology between the Doherty ampli旻爀
and post-distortion linearization makes it possible to improve
ef揻椀攀渀挀礀 and linearity simultaneously in MMW PA designs.
After gate bias optimization of the main and peaking ampli旻爀,
the drain ef揻椀攀渀挀礀 improved 6 at 6-dB output back-off and
the inter-modulation distortion (IMD) of quasi Doherty ampli旻爀
can be improved 18 dB at 42 GHz compared with the balanced
ampli旻爀 operation
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A 38–46 GHz MMIC Doherty Power Amplifier.pdf
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