Abstract— This letter describes the 狻猀琀 demonstration of a fully integrated Doherty power ampli旻爀 (PA) monolithic microwave integrated circuit (MMIC) with post-distortion linearization at millimeter-wave (MMW) frequency band. The Doherty ampli旻爀 MMIC, using a 0.15- m GaAs HEMT process, achieves a small signal gain of 7 dB from 38 to 46 GHz with a compact chip size of 2 mm2 . The saturation output power of the Doherty ampli旻爀 is 21.8 dBm. The similar topology between the Doherty ampli旻爀 and post-distortion linearization makes it possible to improve ef揻椀攀渀挀礀 and linearity simultaneously in MMW PA designs. After gate bias optimization of the main and peaking ampli旻爀, the drain ef揻椀攀渀挀礀 improved 6 at 6-dB output back-off and the inter-modulation distortion (IMD) of quasi Doherty ampli旻爀 can be improved 18 dB at 42 GHz compared with the balanced ampli旻爀 operation

A 38–46 GHz MMIC Doherty Power Amplifier.pdf

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