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[Industry researchIBM -- NAND Flash Controller Data Book

Description: This book begins with an overview followed by detailed information on Nand Flash controller software interface, hardware interface, functional operation and core integration.
Platform: | Size: 1042186 | Author: peppermint | Hits:

[Driver Developecc_algorithm_for_web_512b

Description: samsung nand flash k9f series ECC algorithm
Platform: | Size: 172032 | Author: | Hits:

[Windows CECOMMON11

Description: 三星2410的NAND驱动,添加ECC检错。完善后的。-Samsung's NAND-driven 2410, adding ECC Frederick wrong. The perfect.
Platform: | Size: 37888 | Author: 陈群 | Hits:

[OtherNAND_Controller_and_ECC_VHDL

Description: NAND Flash Controller & ECC VHDL Code-NAND Flash Controller
Platform: | Size: 22528 | Author: | Hits:

[Other Embeded programECC_program

Description: ecc 算法实现和纠错 1。nand_trans_result函数是实现ecc的行校验 2。nand_calculate_ecc函数是实现ecc的列校验 3。nand_correct_data函数实现1bit纠错-ecc algorithm and error-correcting one. nand_trans_result function is to achieve parity 2 rows ecc. ecc realize nand_calculate_ecc function is checking out the 3. 1bit error correction function nand_correct_data realize
Platform: | Size: 1024 | Author: czhwin99 | Hits:

[Windows CENF

Description: nand flash的驱动文件,写的很有条理-nand flash driver files, written in a very structured
Platform: | Size: 4096 | Author: lixiang | Hits:

[Technology ManagementECC_Algorithm_Samsung_040624

Description: Samsung NAND Flash (Error Checking & Correction)演算法原理介绍 -Samsung NAND Flash (Error Checking
Platform: | Size: 30720 | Author: 趙小豪 | Hits:

[Technology ManagementECC_Algorithm_Toshiba_v2.1

Description: Toshiba NAND Flash ECC(Error Checking & Correction)演算法原理介绍 -Toshiba NAND Flash ECC (Error Checking
Platform: | Size: 80896 | Author: 趙小豪 | Hits:

[Documentsecc_algorithm_for_web_512b

Description: 三星512b nandflash ecc 算法-Samsung 512b nandflash ecc algorithm
Platform: | Size: 169984 | Author: linfy | Hits:

[OS Developwince

Description: WINce的ECC算法,和读写函数,可对比MTD NAND ECC来学习-WINCE the ECC algorithm, and to read and write functions, can be compared to learn MTD NAND ECC
Platform: | Size: 8192 | Author: 按时地方 | Hits:

[Industry researchBCH

Description: NAND Flash的BCH ECC算法。-NAND Flash of the BCH ECC algorithm.
Platform: | Size: 105472 | Author: chencheng | Hits:

[Embeded-SCM DevelopTypes_of_ECC_Used_on_Flash_AN_01_e

Description: Spanion的关于NAND Flash的ECC算法的简单比较,有兴趣的可以看看。-NAND Flash on Spanion the ECC algorithm is relatively simple, interested can look at.
Platform: | Size: 83968 | Author: chencheng | Hits:

[Software EngineeringMicron_nand

Description: Micron Nand flash Material, including ECC, Nand Command Operation, boot from nand, hamming code. Useful to the nand driver developer.
Platform: | Size: 1697792 | Author: Alfred Cheng | Hits:

[Documentsecc_algorithm_for_web_256w

Description: NAND flash ECC 256 words
Platform: | Size: 165888 | Author: 郑臣鑫 | Hits:

[VHDL-FPGA-VerilogNAND_Controller_and_ECC_VHDL

Description: 完整的控制nand读写的vhdl程序模块,包含了无缝连接的ecc校验程序,非常值得学习借鉴-NAND read and write complete control of the VHDL program modules, including the seamless connection of ecc checking procedures, very worthwhile to learn from
Platform: | Size: 22528 | Author: yangyu | Hits:

[Windows DevelopBCHnandflash

Description: 基于nand flash 的bch源代码,采用c语言时间,可以纠扇区内错误。-Nand flash-based source code of the BCH, using c language time, you can correct the error within the sector.
Platform: | Size: 965632 | Author: daisy | Hits:

[Driver Developeccalgo_040624

Description: NAND Flash ECC Algorithm (Error Checking & Correction)
Platform: | Size: 30720 | Author: check_prog | Hits:

[VHDL-FPGA-VerilogFlashcontrollerxilinx

Description: Single power supply operation — Full voltage range: 2.7 to 3.6 volt read, erase, and program operations — Separate VCCQ for 5 volt I/O tolerance n Automated Program and Erase — Page program: 512 + 16 bytes — Block erase: 8 K + 256 bytes n Block architecture — 8 Kbyte blocks + 256 byte spare area (separately erasable, readable, and programmable) — 512 byte page + 16 byte spare area for ECC and other system overhead information n Fast read and program performance (typical values) — Read: < 7 μs initial, < 50 ns sequential — Program: 200 μs (full page program at 400 ns/byte) — Erase: < 2 ms/8 Kbyte block n Pinout and package — Industry Standard NAND compatible pinout with 8-bit I/O bus and control signals — TSOP-II 44/40 pin package (standard and reverse) with copper lead frame for higher reliability — 40-ball FBGA package provides higher reliability-Single power supply operation — Full voltage range: 2.7 to 3.6 volt read, erase, and program operations — Separate VCCQ for 5 volt I/O tolerance n Automated Program and Erase — Page program: 512+ 16 bytes — Block erase: 8 K+ 256 bytes n Block architecture — 8 Kbyte blocks+ 256 byte spare area (separately erasable, readable, and programmable) — 512 byte page+ 16 byte spare area for ECC and other system overhead information n Fast read and program performance (typical values) — Read: < 7 μs initial, < 50 ns sequential — Program: 200 μs (full page program at 400 ns/byte) — Erase: < 2 ms/8 Kbyte block n Pinout and package — Industry Standard NAND compatible pinout with 8-bit I/O bus and control signals — TSOP-II 44/40 pin package (standard and reverse) with copper lead frame for higher reliability — 40-ball FBGA package provides higher reliability
Platform: | Size: 847872 | Author: enyou | Hits:

[OtherEccalgo

Description: Samsung NAND flash ECC说明-Samsung NAND flash ECC algorithm introduction
Platform: | Size: 71680 | Author: Jack Tsai | Hits:

[FlashMXECC

Description: nand driver for micro device
Platform: | Size: 5120 | Author: astrorainbow | Hits:
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