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Description: Cad component for delphi
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Size: 586752 |
Author: Sarol sanyi |
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Description: 本人主要学习研究synopsis公司的Sentaurus TCAD半导体工艺软件的使用,此程序主要是实现对光电二极管的I-V特性曲线的仿真脚本（可以测试反相击穿电压以及正向阈值电压）-I mainly study the synopsis of Sentaurus TCAD semiconductor process software, the use of this program is mainly for the photodiode I- V characteristic curve of the simulation script (can test the reverse breakdown voltage, and positive threshold voltage)
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Size: 1024 |
Author: ReadingBlue |
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Description: //VerilogA for double-gate GaSb-InAs Heterojunction Tunnel FET model based on lookup tables, which employs the current and capacitance characteristics calibrated TCAD Sentaurus Simulations
//Model details: V. Saripalli et al IEEE/ACM NanoArch 2011.
//Original Model Developed by V. Saripalli
//Implemented by H. Liu -//VerilogA for double-gate GaSb-InAs Heterojunction Tunnel FET model based on lookup tables, which employs the current and capacitance characteristics calibrated TCAD Sentaurus Simulations
//Model details: V. Saripalli et al IEEE/ACM NanoArch 2011.
//Original Model Developed by V. Saripalli
//Implemented by H. Liu
Platform: |
Size: 1823744 |
Author: achunn |
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Description: //VerilogA for double-gate GaSb-InAs Heterojunction Tunnel FET model based on lookup tables, which employs the current and capacitance characteristics calibrated TCAD Sentaurus Simulations
//Model details: V. Saripalli et al IEEE/ACM NanoArch 2011.
//Original Model Developed by V. Saripalli
//Implemented by H. Liu -//VerilogA for double-gate GaSb-InAs Heterojunction Tunnel FET model based on lookup tables, which employs the current and capacitance characteristics calibrated TCAD Sentaurus Simulations
//Model details: V. Saripalli et al IEEE/ACM NanoArch 2011.
//Original Model Developed by V. Saripalli
//Implemented by H. Liu
Platform: |
Size: 2163712 |
Author: achunn |
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