Description: Flash-ROM(闪存)已经成为了目前最成功、流行的一种固态内存,与 EEPROM 相比具有读写速度快,而与 SRAM 相比具有非易失、以及价廉等优势。而基于 NOR 和 NAND 结构的闪存是现在市场上两种主要的非易失闪存技术。 Intel 于 1988 年首先开发出 NOR flash 技术,彻底改变了原先由 EPROM 和 EEPROM 一统天下的局面。紧接着,1989 年东芝公司发表了 NAND flash 技术(后将该技术无偿转让给韩国 Samsung 公司),强调降低每比特的成本,更高的性能,并且象磁盘一样可以通过接口轻松升级。-Flash-ROM (flash memory) has become the most successful and popular form of solid-state memory, Compared with the EEPROM with faster read and write, compared with SRAM and nonvolatile, and the advantages of cheap. For the NOR, and NAND flash memory structure of the market is now two main nonvolatile flash memory technology. Intel in 1988 to develop the first NOR flash technology, completely changed from the original EPROM and EEPROM dominate the market situation. Then, 1989 Toshiba Corporation issued a NAND flash technology (free after the technology transfer to the South Korean Sam sung), stressing the lower cost per bit, higher performance, and the same as the disk interface can be easily upgraded. Platform: |
Size: 56060 |
Author:吕过 |
Hits:
Description: 本方案主要介绍了利用凌阳SPCE061A精简开发板作为控制核心,外扩64M三星NAND Flash存储器,利用SPLC501液晶显示模组显示的简易语音电子书的设计方案。该电子书不仅可以使读者看书,而且可以听书,利用我们的SPCE061A的语音功能开发出一个\"趣味书屋\"。
-The program introduces the use of Sunplus SPCE061A streamline the development board as a core control, 64 M expansion outside Samsung NAND Flash memory, SPLC501 use LCD display module simple voice e-books design. The e-books so that readers can not only read, but can listen to, We use the voice features SPCE061A developed an "interesting book store." Platform: |
Size: 314548 |
Author:鹰 |
Hits:
Description: Flash-ROM(闪存)已经成为了目前最成功、流行的一种固态内存,与 EEPROM 相比具有读写速度快,而与 SRAM 相比具有非易失、以及价廉等优势。而基于 NOR 和 NAND 结构的闪存是现在市场上两种主要的非易失闪存技术。 Intel 于 1988 年首先开发出 NOR flash 技术,彻底改变了原先由 EPROM 和 EEPROM 一统天下的局面。紧接着,1989 年东芝公司发表了 NAND flash 技术(后将该技术无偿转让给韩国 Samsung 公司),强调降低每比特的成本,更高的性能,并且象磁盘一样可以通过接口轻松升级。-Flash-ROM (flash memory) has become the most successful and popular form of solid-state memory, Compared with the EEPROM with faster read and write, compared with SRAM and nonvolatile, and the advantages of cheap. For the NOR, and NAND flash memory structure of the market is now two main nonvolatile flash memory technology. Intel in 1988 to develop the first NOR flash technology, completely changed from the original EPROM and EEPROM dominate the market situation. Then, 1989 Toshiba Corporation issued a NAND flash technology (free after the technology transfer to the South Korean Sam sung), stressing the lower cost per bit, higher performance, and the same as the disk interface can be easily upgraded. Platform: |
Size: 55296 |
Author:吕过 |
Hits:
Description: 本方案主要介绍了利用凌阳SPCE061A精简开发板作为控制核心,外扩64M三星NAND Flash存储器,利用SPLC501液晶显示模组显示的简易语音电子书的设计方案。该电子书不仅可以使读者看书,而且可以听书,利用我们的SPCE061A的语音功能开发出一个"趣味书屋"。
-The program introduces the use of Sunplus SPCE061A streamline the development board as a core control, 64 M expansion outside Samsung NAND Flash memory, SPLC501 use LCD display module simple voice e-books design. The e-books so that readers can not only read, but can listen to, We use the voice features SPCE061A developed an "interesting book store." Platform: |
Size: 314368 |
Author:鹰 |
Hits:
Description: 深圳优龙基于三星S3C2440芯片的YL2440开发板测试源码,包括底板各种驱动测试代码,例如摄像头,红外,存储器,Flash-Shenzhen, Liuzhou excellent chip-based Samsung S3C2440 development board YL2440 test source, including a variety of drives backplanes test code, such as cameras, infrared, memory, Flash Platform: |
Size: 76800 |
Author:gaofeng |
Hits:
Description: K9F1208是Samsung公司生产的采用NAND技术的大容量、高可靠Flash存储器。该器件存储容量为64M×8位,除此之外还有2048K×8位的空闲存储区。该器件采用TSSOP48封装,工作电压2.7~3.6V。-K9F1208 is manufactured by Samsung using NAND technology, large-capacity, highly reliable Flash memory. The device storage capacity of 64M × 8, and in addition to 2048K × 8-bit free storage area. The device is available in TSSOP48 package and operating voltage 2.7 ~ 3.6V. Platform: |
Size: 55296 |
Author:niu xiaolei |
Hits:
Description: 三星公司官方JTAG下载工具SJF2440源代码下载。SJF2440 can program SMDK2440 flash memory (K9S1208,Intel E28F128,AMD29LV800BB) through JTAG port and
read/write data from/to a specified address.-Samsung Platform: |
Size: 289792 |
Author:琢光 |
Hits:
Description: 三星公司sjf2440源代码 三星公司官方JTAG下载工具SJF2440源代码下载-SJF2440 can program SMDK2440 flash memory (K9S1208,Intel E28F128,AMD29LV800BB) through JTAG port and
read/write data from/to a specified address.
Platform: |
Size: 557056 |
Author:周加林 |
Hits:
Description: OneNAND闪存在嵌入式系统中的应用
OneNAND Flash是三星公司开发的一类Flash芯片,它克服了传统NAND Flash接口复杂的缺点,具有接口简单、读写速度快、容量大、寿命长、成本低等优点。文章从软硬件两方面介绍了其在嵌入式系统中的应用,特别是逻辑块和物理块地址的映射、读写擦操作、坏块处理、性能优化等技术。-OneNAND flash memory in embedded system applications developed by Samsung' s OneNAND Flash is a type Flash chips, which overcomes the traditional shortcomings of NAND Flash interface, a complex with a simple interface, read and write speed, large capacity and long life and low cost advantages. The article describes both hardware and software in embedded system applications, in particular logical block and physical block address mapping, read and write wiping operation, bad block handling, performance optimization technologies. Platform: |
Size: 48128 |
Author:zhangdong |
Hits:
Description: SAMSUANG u盘原理图及pcb。1G闪存,主控芯邦cbm2080。想开发u盘的可以看看。闪存大小可以换,8G、16G都可以,闪存管脚是相同的。使用AD10打开。-SAMSUANG u disk schematic and pcb. 1G flash memory, master Chipsbrand cbm2080. U want to develop disk can see. Flash memory size can be changed, 8G, 16G can, flash pins are the same. Use AD10 open. Platform: |
Size: 753664 |
Author:何德思 |
Hits: